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| RF2301 4 Typical Applications * Local Oscillator Buffer Amplifiers * FDD and TDD Communication Systems * Commercial and Consumer Systems * Portable Battery-Powered Equipment * Wireless LAN * ISM Band Applications HIGH ISOLATION BUFFER AMPLIFIER Product Description The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to higher than 2500MHz. With +5dBm output power, it may also be used as a driver in transmitter applications. The device is packaged in an 8-lead plastic package. The product is self-contained, requiring just a resistor and blocking capacitors to operate. The output power, combined with 50dB reverse isolation at 900MHz allows excellent buffering of LO sources to impedance changes. The device can be used in 3V battery applications. The unit has a total gain of 17dB with only 14mA current from a 3V supply. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS GaAs HBT SiGe HBT 0.008 0.004 0.018 0.014 -A- 4 GENERAL PURPOSE AMPLIFIERS 0.196 0.189 0.050 0.157 0.150 0.244 0.229 Dimensions in mm 0.068 0.053 8 MAX 0 MIN 0.034 0.016 0.009 0.007 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". u Package Style: SOIC-8 GaAs MESFET Si CMOS Features * Single 2.7V to 6.0V Supply * +4dBm Output Power * 21dB Small Signal Gain * 50dB Reverse Isolation at 900MHz * Low DC Current Consumption of 14mA * 300MHz to 2500MHz Operation GND 1 GND 2 RF IN 3 GND 4 8 VDD1 7 VDD2 6 RF OUT 5 GND Ordering Information RF2301 RF2301 PCBA High Isolation Buffer Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A8 010717 4-37 RF2301 Absolute Maximum Ratings Parameter Supply Voltage (VDD) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Rating -0.5 to +6.5 60 +10 -40 to +85 -40 to +150 Unit VDC mA dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. 300 to 2500 -8 8 <2:1 <2:1 2.7 to 6.0 Unit MHz dBm dB Condition T=25C, VDD =5VDC 4 GENERAL PURPOSE AMPLIFIERS Overall Nominal Frequency Range Input IP3 Noise Figure Input VSWR Output VSWR Power Supply Voltage In a 50 system In a 50 system V Using Broad Band Application Circuit, VDD =5VDC, Freq=2500MHZ, T=25C Nominal 5V Configuration Gain P1dB Output Power Supply Current Reverse Isolation 21 10 24 +4 30 50 50 40 40 26 40 dB dBm mA dB dB dB dB Nominal 3V Configuration Gain P1dB Output Power Supply Current Reverse Isolation 15 17 0 14 50 50 40 40 dB dBm mA dB dB dB dB 900MHz, without RF input 900MHz, with RF input, saturated 2500MHz, without RF input 2500MHz, with RF input, saturated Using Broad Band Application Circuit, VDD =3VDC, Freq=2500MHZ, T=25C 900MHz, without RF input 900MHz, with RF input, saturated 2500MHz, without RF input 2500MHz, with RF input, saturated 4-38 Rev A8 010717 RF2301 Pin 1 2 3 Function GND GND RF IN Description Low inductance ground connections. Use individual vias to backside ground plane, placed within 0.030" of pin landing for optimum performance. Same as pin 1. DC-coupled RF input. A broadband impedance match is produced by internal shunt resistive feedback. The DC level is 0V. If a DC voltage is present from connected circuitry, an external DC-blocking capacitor is required for the proper DC operating point. Same as pin 1. Same as pin 1. Open drain RF output. A broadband impedance match is produced by an external 100 resistor to power supply as shown in Application Schematic 1. Approximately 3dB improvement in gain and output power can be obtained over at least a 20% bandwidth by replacing the resistor to power supply with an external chip inductor network as shown in Application Schematic 2. An external DC-blocking capacitor is required if the following circuitry is not DC-blocked. VDD1 VDD2 Interface Schematic 4 5 6 GND GND RF OUT 4 RF OUT RF IN 7 8 VDD2 VDD1 Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane. Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane. Rev A8 010717 4-39 GENERAL PURPOSE AMPLIFIERS RF2301 Application Schematic 1 Broadband Match VDD 1 nF 1 2 8 7 6 100 pF 4 5 100 RF OUT 4 GENERAL PURPOSE AMPLIFIERS RF IN 100 pF 3 Application Schematic 2 Optimum Match VDD 100 pF 1 2 RF IN 100 pF 4 5 3 8 7 6 L2 RF OUT L1 100 pF FREQUENCY 900 MHz 2500 MHz L1 18 nH ---- L2 22 nH 2.7 nH 4-40 Rev A8 010717 RF2301 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 C3 100 pF 1 C1 100 pF 2 3 4 8 7 6 5 A B See Chart C2 100 pF C C4 1 nF 50 strip J2 RF OUT J1 RF IN 50 strip 4 GENERAL PURPOSE AMPLIFIERS 2301400A FREQUENCY BAND BROADBAND (default config.) COMPONENT A 100 N/A 2.7 nH B 0 18 nH 0 C N/A 22 nH N/A P1-1 P1 1 2 3 VDD GND 900 MHz 2450 MHz Evaluation Board Layout 1.43" x 1.43" Board Thickness 0.031"; Board Material FR-4 Rev A8 010717 4-41 RF2301 Typical Characteristics Broadband Application Circuit 30 30 20 Gain 25 10 0 Idd 20 GENERAL PURPOSE AMPLIFIERS 15 -20 -30 10 -40 Reverse Isolation -50 P1dB 5 -60 3 3.5 4 Vdd (V) 30 30 Gain Gain 20 20 0 4.5 5 10 10 0 0 dB dB -10 -10 -20 -20 -30 -30 Reverse Isolation ReverseIsolation -40 -40 -50 -50 0 500 500 1000 1000 1500 1500 Frequency (MHz) (MHz) 2000 2000 2500 2500 3000 3000 4-42 Rev A8 010717 dBm, mA 4 dB -10 RF2301 S11, VCC = 3V S11 Vcc=3V 1.0 0.6 0.6 S22, Vcc=3V S22 VCC = 3V Swp Max 6GHz 2.0 1.0 Swp Max 6GHz 0.8 0.8 0 3. 2.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 600 MHz 5 GHz 500 MHz 4.0 5.0 0 0 10.0 100 MHz 4.5 GHz 3 GHz 2 GHz .0 -2 -0. 6 -0.8 -0. 6 Swp Min 0.01GHz -0.8 .0 -2 -1.0 S11, Vcc=5V S11 VCC = 5V 1.0 0.6 0.6 Swp Max 6GHz S22, Vcc=5V S22 VCC = 5V 1.0 Swp Max 6GHz 0.8 2.0 0.8 -1.0 0 3. 2.0 0 3. 3 GHz 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 5 GHz 4.0 5.0 0 0 500 MHz 5 GHz 10.0 100 MHz 4.5 GHz 1.5 GHz 2.5 GHz - - -0. 6 -0.8 -0. 6 Swp Min 0.01GHz -0.8 .0 -2 .0 -2 -1.0 S-Parameter Conditions: All plots are taken at ambient temperature=25C. NOTE: All S11 and S22 plots shown were taken from an RF2301 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins. Rev A8 010717 -1.0 -3 -3 4 0. 4 0. -4. 0 -5.0 .0 -4. 0 -5.0 -0.2 -0.2 3.7 GHz Swp Min 0.01GHz -10.0 0.2 4.0 5.0 -3 0. 4 -10.0 -3 .4 -0 .4 -0 -4. 0 -5.0 .0 -4. 0 -5.0 -0.2 -0.2 5 GHz Swp Min 0.01GHz 4.0 5.0 10.0 4-43 GENERAL PURPOSE AMPLIFIERS 1 GHz -10.0 0.2 4.0 5.0 0. 4 5.5 GHz -10.0 .0 .0 0. 4 0. 4 0 3. 4.0 5.0 0.2 0.2 10.0 4 RF2301 Gain versus Temperature Freq = 900 MHz 23.0 -5.0 IIP3 versus Temperature Freq = 900 MHz 22.0 -5.5 21.0 -6.0 20.0 19.0 IIP3 (dBm) Vcc=3V Vcc=5V Gain (dB) -6.5 18.0 -7.0 4 GENERAL PURPOSE AMPLIFIERS 17.0 -7.5 Vcc=3V Vcc=5V -8.0 -60.0 16.0 15.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) OP1dB versus Temperature Freq = 900 MHz 5.0 27.0 ICC versus Temperature Freq = 900 MHz 4.0 26.0 3.0 25.0 OP1dB (dBm) ICC (mA) 2.0 24.0 1.0 23.0 0.0 -1.0 Vcc=3V Vcc=5V 22.0 Vcc=3V Vcc=5V -2.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 21.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) 4-44 Rev A8 010717 RF2301 Gain versus Temperature Freq = 1950 MHz 23.0 Vcc=3V 22.0 Vcc=5V -5.5 -5.0 IIP3 versus Temperature Freq = 1950 MHz 21.0 -6.0 20.0 19.0 IIP3 (dBm) Gain (dB) -6.5 18.0 -7.0 17.0 -7.5 16.0 Vcc=5V 15.0 -60.0 -8.0 -60.0 Vcc=3V 4 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) OP1dB versus Temperature Freq = 1950 MHz 5.0 26.0 25.5 4.0 25.0 24.5 3.0 ICC versus Temperature Freq = 1950 MHZ OP1dB (dBm) 24.0 2.0 ICC (mA) 23.5 23.0 1.0 22.5 22.0 0.0 Vcc=3V Vcc=5V -1.0 -60.0 21.5 21.0 -60.0 Vcc=3V Vcc=5V -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) Rev A8 010717 4-45 GENERAL PURPOSE AMPLIFIERS RF2301 Gain versus Temperature Freq = 2450 MHz 21.0 Vcc=3V 20.0 Vcc=5V 19.0 -6.0 18.0 -5.5 -5.0 IIP3 versus Temperature Freq = 2450 MHz IIP3 (dBm) Gain (dB) -6.5 17.0 -7.0 16.0 4 GENERAL PURPOSE AMPLIFIERS -7.5 15.0 -8.0 Vcc=3V Vcc=5V 13.0 -60.0 -8.5 -60.0 14.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) OP1dB versus Temperature Freq = 2450 MHz 3.0 2.5 26.0 2.0 1.5 25.0 27.0 ICC versus Temperature Freq = 2450 MHz OP1dB (dBm) 1.0 ICC (mA) Vcc=3V 0.5 0.0 24.0 23.0 -0.5 -1.0 22.0 Vcc=3V Vcc=5V 21.0 -60.0 -1.5 -2.0 -60.0 Vcc=5V -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) S11 of Evaluation Board versus Frequency Temperature = +25C 2.8 2.6 2.4 2.2 3.0 2.8 2.6 2.4 S22 of Evaluation Board versus Frequency Temperature = +25C Output VSWR Vcc=3V Input VSWR 2.2 2.0 1.8 1.6 2.0 1.8 1.6 1.4 1.2 Vcc=5V 1.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 1.4 Vcc=3.0V 1.2 Vcc=5.0V 1.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Frequency (MHz) 4-46 Rev A8 010717 |
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